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| 74AUP1T57 Low-power configurable gate with voltage-level translator Rev. 02 -- 3 August 2009 Product data sheet 1. General description The 74AUP1T57 provides low-power, low-voltage configurable logic gate functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND, NOR, XNOR, inverter and buffer. All inputs can be connected to VCC or GND. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T57 is designed for logic-level translation applications with input switching levels that accept 1.8 V low-voltage CMOS signals, while operating from either a single 2.5 V or 3.3 V supply voltage. The wide supply voltage range ensures normal operation as battery voltage drops from 3.6 V to 2.3 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across the entire VCC range. 2. Features I Wide supply voltage range from 2.3 V to 3.6 V I High noise immunity I ESD protection: N HBM JESD22-A114E Class 3A exceeds 5000 V N MM JESD22-A115-A exceeds 200 V N CDM JESD22-C101C exceeds 1000 V I Low static power consumption; ICC = 1.5 A (maximum) I Latch-up performance exceeds 100 mA per JESD 78 Class II I Inputs accept voltages up to 3.6 V I Low noise overshoot and undershoot < 10 % of VCC I IOFF circuitry provides partial Power-down mode operation I Multiple package options I Specified from -40 C to +85 C and -40 C to +125 C NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator 3. Ordering information Table 1. Ordering information Package Temperature range Name 74AUP1T57GW 74AUP1T57GM 74AUP1T57GF -40 C to +125 C -40 C to +125 C -40 C to +125 C SC-88 XSON6 XSON6 Description plastic surface-mounted package; 6 leads Version SOT363 Type number plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 x 1.45 x 0.5 mm plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 x 1 x 0.5 mm 4. Marking Table 2. Marking Marking code[1] a7 a7 a7 Type number 74AUP1T57GW 74AUP1T57GM 74AUP1T57GF [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram 3 4 B 1 Y A C 6 001aab583 Fig 1. Logic symbol 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 2 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator 6. Pinning information 6.1 Pinning 74AUP1T57 74AUP1T57 B GND 1 2 6 5 C GND VCC A A 3 001aah472 B 1 6 C B GND 74AUP1T57 1 2 3 6 5 4 C VCC Y 2 5 VCC 3 4 Y A 4 Y 001aah471 001aah473 Transparent top view Transparent top view Fig 2. Pin configuration SOT363 (SC-88) Fig 3. Pin configuration SOT886 (XSON6) Fig 4. Pin configuration SOT891 (XSON6) 6.2 Pin description Table 3. Symbol B GND A Y VCC C Pin description Pin 1 2 3 4 5 6 Description data input ground (0 V) data input data output supply voltage data input 7. Functional description Table 4. Input C L L L L H H H H [1] H = HIGH voltage level; L = LOW voltage level. Function table[1] Output B L L H H L L H H A L H L H L H L H Y H L H L L L H H 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 3 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator 7.1 Logic configurations Table 5. Function selection table Figure see Figure 5 see Figure 8 see Figure 6 and 7 see Figure 6 and 7 see Figure 8 see Figure 5 see Figure 9 see Figure 10 see Figure 11 Logic function 2-input AND 2-input AND with both inputs inverted 2-input NAND with inverted input 2-input OR with inverted input 2-input NOR 2-input NOR with both inputs inverted 2-input XNOR Inverter Buffer VCC B C Y B 1 2 B C Y 3 6 5 4 Y B C Y C B C Y B 1 2 3 6 5 4 Y C VCC 001aab584 001aab585 Fig 5. 2-input AND gate or 2-input NOR gate with both inputs inverted Fig 6. 2-input NAND gate with input B inverted or 2-input OR gate with inverted C input VCC VCC A C Y 1 2 A C Y A 3 6 5 4 Y A C Y A C A C Y 1 2 3 6 5 4 Y C 001aab586 001aab587 Fig 7. 2-input NAND gate with input C inverted or 2-input OR gate with inverted A input Fig 8. 2-input NOR gate or 2-input AND gate with both inputs inverted VCC VCC B B C Y 1 2 3 6 5 4 Y C A Y A 1 2 3 6 5 4 Y 001aab588 001aab589 Fig 9. 2-input XNOR gate Fig 10. Inverter 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 4 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator VCC B B Y 1 2 3 6 5 4 Y 001aab590 Fig 11. Buffer 8. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC IIK VI IOK VO IO ICC IGND Tstg Ptot [1] [2] Parameter supply voltage input clamping current input voltage output clamping current output voltage output current supply current ground current storage temperature total power dissipation Conditions VI < 0 V [1] Min -0.5 -50 -0.5 -50 [1] Max +4.6 +4.6 +4.6 20 50 +150 250 Unit V mA V mA V mA mA mA C mW VO < 0 V Active mode and Power-down mode VO = 0 V to VCC -0.5 -50 -65 Tamb = -40 C to +125 C [2] - The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. For SC-88 package: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K. 9. Recommended operating conditions Table 7. Symbol VCC VI VO Tamb Recommended operating conditions Parameter supply voltage input voltage output voltage ambient temperature Active mode Power-down mode; VCC = 0 V Conditions Min 2.3 0 0 0 -40 Max 3.6 3.6 VCC 3.6 +125 Unit V V V V C 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 5 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator 10. Static characteristics Table 8. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = 25 C VT+ VT- VH positive-going threshold voltage negative-going threshold voltage hysteresis voltage VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V (VH = VT+ - VT-) VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-level output voltage VI = VT+ or VT- IO = -20 A; VCC = 2.3 V to 3.6 V IO = -2.3 mA; VCC = 2.3 V IO = -3.1 mA; VCC = 2.3 V IO = -2.7 mA; VCC = 3.0 V IO = -4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = VT+ or VT- IO = 20 A; VCC = 2.3 V to 3.6 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF IOFF ICC ICC CI CO VT+ VT- VH input leakage current power-off leakage current additional power-off leakage current supply current additional supply current input capacitance output capacitance positive-going threshold voltage negative-going threshold voltage hysteresis voltage VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 2.3 V to 3.6 V VCC = 2.3 V to 2.7 V; IO = 0 A VCC = 3.0 V to 3.6 V; IO = 0 A VCC = 0 V to 3.6 V; VI = GND or VCC VO = GND; VCC = 0 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V (VH = VT+ - VT-) VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V 0.10 0.15 0.60 0.56 V V [1] [2] Conditions Min 0.60 0.75 0.35 0.50 0.23 0.25 VCC - 0.1 2.05 1.9 2.72 2.6 0.60 0.75 0.35 0.50 Typ 0.8 1.7 - Max 1.10 1.16 0.60 0.85 0.60 0.56 0.10 0.31 0.44 0.31 0.44 0.1 0.1 0.2 1.2 1.10 1.19 0.60 0.85 Unit V V V V V V V V V V V V V V V V A A A A A A pF pF V V V V Tamb = -40 C to +85 C 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 6 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator Table 8. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VOH HIGH-level output voltage Conditions VI = VT+ or VT- IO = -20 A; VCC = 2.3 V to 3.6 V IO = -2.3 mA; VCC = 2.3 V IO = -3.1 mA; VCC = 2.3 V IO = -2.7 mA; VCC = 3.0 V IO = -4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = VT+ or VT- IO = 20 A; VCC = 2.3 V to 3.6 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF IOFF ICC ICC input leakage current power-off leakage current additional power-off leakage current supply current additional supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 2.3 V to 3.6 V VCC = 2.3 V to 2.7 V; IO = 0 A VCC = 3.0 V to 3.6 V; IO = 0 A Tamb = -40 C to +125 C VT+ VT- VH positive-going threshold voltage negative-going threshold voltage hysteresis voltage VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V (VH = VT+ - VT-) VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-level output voltage VI = VT+ or VT- IO = -20 A; VCC = 2.3 V to 3.6 V IO = -2.3 mA; VCC = 2.3 V IO = -3.1 mA; VCC = 2.3 V IO = -2.7 mA; VCC = 3.0 V IO = -4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = VT+ or VT- IO = 20 A; VCC = 2.3 V to 3.6 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II 74AUP1T57_2 Min VCC - 0.1 1.97 1.85 2.67 2.55 [1] [2] Typ - Max 0.1 0.33 0.45 0.33 0.45 0.5 0.5 0.5 1.5 4 12 1.10 1.19 0.64 0.85 0.60 0.56 0.11 0.36 0.50 0.36 0.50 0.75 Unit V V V V V V V V V V A A A A A A V V V V V V V V V V V V V V V V A 7 of 17 0.60 0.75 0.33 0.46 0.10 0.15 VCC - 0.11 1.77 1.67 2.40 2.30 - input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V Rev. 02 -- 3 August 2009 (c) NXP B.V. 2009. All rights reserved. Product data sheet NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator Table 8. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter IOFF IOFF ICC ICC power-off leakage current additional power-off leakage current supply current additional supply current Conditions VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 2.3 V to 3.6 V VCC = 2.3 V to 2.7 V; IO = 0 A VCC = 3.0 V to 3.6 V; IO = 0 A [1] [2] One input at 0.3 V or 1.1 V, other input at VCC or GND. One input at 0.45 V or 1.2 V, other input at VCC or GND. [1] [2] Min - Typ - Max 0.75 0.75 3.5 7 22 Unit A A A A A 11. Dynamic characteristics Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13. Symbol Parameter Conditions Min VCC = 2.3 V to 2.7 V; VI = 1.65 V to 1.95 V tpd propagation delay A, B, C to Y; see Figure 12 CL = 5 pF CL = 10 pF CL = 15 pF CL = 30 pF VCC = 2.3 V to 2.7 V; VI = 2.3 V to 2.7 V tpd propagation delay A, B, C to Y; see Figure 12 CL = 5 pF CL = 10 pF CL = 15 pF CL = 30 pF VCC = 2.3 V to 2.7 V; VI = 3.0 V to 3.6 V tpd propagation delay A, B, C to Y; see Figure 12 CL = 5 pF CL = 10 pF CL = 15 pF CL = 30 pF VCC = 3.0 V to 3.6 V; VI = 1.65 V to 1.95 V tpd propagation delay A, B, C to Y; see Figure 12 CL = 5 pF CL = 10 pF CL = 15 pF CL = 30 pF 74AUP1T57_2 25 C Typ[1] Max -40 C to +125 C Min Max (85 C) Max (125 C) Unit [2] 2.1 2.6 2.9 3.8 [2] 3.6 4.1 4.6 5.8 5.5 6.2 6.8 8.2 0.5 1.0 1.0 1.5 6.8 7.9 8.7 10.8 7.5 8.7 9.6 11.9 ns ns ns ns 1.7 2.1 2.5 3.3 [2] 3.4 4.0 4.5 5.6 5.4 6.2 6.7 8.2 0.5 1.0 1.0 1.5 6.0 7.1 7.9 10.0 6.6 7.9 8.7 11.0 ns ns ns ns 1.4 1.8 2.2 3.0 [2] 3.2 3.7 4.2 5.4 4.9 5.7 6.3 7.8 0.5 1.0 1.0 1.5 5.5 6.5 7.4 9.5 6.1 7.2 8.2 10.5 ns ns ns ns 2.0 2.5 2.8 3.6 2.9 3.5 3.9 5.1 3.9 4.6 5.2 6.6 0.5 1.0 1.0 1.5 8.0 8.5 9.1 9.8 8.8 9.4 10.1 10.8 ns ns ns ns (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 8 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator Table 9. Dynamic characteristics ...continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13. Symbol Parameter Conditions Min VCC = 3.0 V to 3.6 V; VI = 2.3 V to 2.7 V tpd propagation delay A, B, C to Y; see Figure 12 CL = 5 pF CL = 10 pF CL = 15 pF CL = 30 pF VCC = 3.0 V to 3.6 V; VI = 3.0 V to 3.6 V tpd propagation delay A, B, C to Y; see Figure 12 CL = 5 pF CL = 10 pF CL = 15 pF CL = 30 pF Tamb = 25 C CPD power dissipation capacitance fi = 1 MHz; VI = GND to VCC VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [1] [2] [3] All typical values are measured at nominal VCC. tpd is the same as tPLH and tPHL CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD x VCC2 x fi x N + (CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL x VCC2 x fo) = sum of the outputs. [3] [2] [2] 25 C Typ[1] Max -40 C to +125 C Min Max (85 C) Max (125 C) Unit 1.6 2.0 2.3 3.1 2.8 3.4 3.9 5.0 4.2 4.9 5.5 6.9 0.5 1.0 1.0 1.5 5.3 6.1 6.8 8.5 5.9 6.8 7.5 9.4 ns ns ns ns 1.3 1.7 2.0 2.8 2.8 3.3 3.8 4.9 4.2 4.9 5.5 7.0 0.5 1.0 1.0 1.5 4.7 5.7 6.2 7.8 5.2 6.3 6.9 8.6 ns ns ns ns - 3.6 4.3 - - - - pF pF 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 9 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator 12. Waveforms VI A, B, C input GND t PHL VOH Y output VOL t PLH VOH Y output VOL VM VM t PHL VM VM t PLH VM VM 001aab593 Measurement points are given in Table 10. VOL and VOH are typical output voltage drop that occur with the output load. Fig 12. Input A, B and C to output Y propagation delay times Table 10. VCC 2.3 V to 3.6 V Measurement points Output VM 0.5 x VCC Input VM 0.5 x VI VI 1.65 V to 3.6 V tr = tf 3.0 ns Supply voltage 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 10 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator VCC VEXT 5 k G VI VO DUT RT CL RL 001aac521 Test data is given in Table 11. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 13. Load circuitry for switching times Table 11. VCC 2.3 V to 3.6 V [1] Test data Load CL 5 pF, 10 pF, 15 pF and 30 pF RL[1] 5 k or 1 M VEXT tPLH, tPHL open tPZH, tPHZ GND tPZL, tPLZ 2 x VCC Supply voltage For measuring enable and disable times RL = 5 k, for measuring propagation delays, setup and hold times and pulse width RL = 1 M. 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 11 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator 13. Package outline Plastic surface-mounted package; 6 leads SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 14. Package outline SOT363 (SC-88) 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 12 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4x L1 L (2) e 6 e1 5 e1 4 6x (2) A A1 D E terminal 1 index area 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) max 0.5 A1 max 0.04 b 0.25 0.17 D 1.5 1.4 E 1.05 0.95 e 0.6 e1 0.5 L 0.35 0.27 L1 0.40 0.32 1 scale 2 mm Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC MO-252 JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 Fig 15. Package outline SOT886 (XSON6) 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 13 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm SOT891 1 2 b 3 4x (1) L1 e L 6 e1 5 e1 4 6x (1) A A1 D E terminal 1 index area 0 1 scale DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 max 0.04 b 0.20 0.12 D 1.05 0.95 E 1.05 0.95 e 0.55 e1 0.35 L 0.35 0.27 L1 0.40 0.32 2 mm Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION SOT891 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15 Fig 16. Package outline SOT891 (XSON6) 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 14 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator 14. Abbreviations Table 12. Acronym CDM CMOS DUT ESD HBM MM Abbreviations Description Charged Device Model Complementary Metal Oxide Semiconductor Device Under Test ElectroStatic Discharge Human Body Model Machine Model 15. Revision history Table 13. Revision history Release date 20090803 Data sheet status Product data sheet Change notice Supersedes 74AUP1T57_1 Document ID 74AUP1T57_2 Modifications: 74AUP1T57_1 * Table 2 "Marking": Changed: marking code for all packages changed from p7 to a7. Product data sheet - 20080103 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 15 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator 16. Legal information 16.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 16.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 74AUP1T57_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 -- 3 August 2009 16 of 17 NXP Semiconductors 74AUP1T57 Low-power configurable gate with voltage-level translator 18. Contents 1 2 3 4 5 6 6.1 6.2 7 7.1 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Logic configurations . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Recommended operating conditions. . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 August 2009 Document identifier: 74AUP1T57_2 |
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